LPE Growth of CuGa1-xInxS2 on ZnSe Substrate Using a Mixture of CuGaS2 and CuInS2 as a Solute

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Abstract
Liquid Phase Epitaxial (LPE) growth using (CuGaS2)1-Y –(CuInS2) Y as a solute, ZnSe as a substrate and In as a solvent has been studied by varying Y under the growth conditions of a maximum temperature T m of 700 and 650°C, and constant cooling rate CR of 0.5°C/min. The over-growth layer is confirmed to be epitaxial CuGa1-x In x S2 by means of EPMA and electron diffraction under the growth conditions of T m=700°C for all Y and T m=650°C for Y≦0.7 for T m=700°C, x is not proportional to Y and is almost constant for low Y. For T m=650°C, the x-Y relation is similar to that for T m=700°C, but the In content is higher than that for T m=700°C. When Y>0.8, the growth rate and Cu content in the overgrowth layer rapidly decrease, where the ternary compound and/or ternary-ternary alloy growth layer could no longer be obtained. Thus, the range of epitaxial growth was Y≦0.7 for T m=650°C. The above results are discussed and compared with those of our previous reports.

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