Formation of ß-Si3N4 during high temperature nitrogen implantation
- 1 December 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 29 (3) , 591-592
- https://doi.org/10.1016/0168-583x(87)90074-7
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The effect of beam current and dose on the formation of buried silicon nitride layers by nitrogen implantation with a stationary beamNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Characterization of buried silicon-nitride formed by nitrogen implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Fabrication of buried layers of SiO2 and Si3N4 a using ion beam synthesisNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- CMOS on buried nitride—A VLSI SOI technologyIEEE Transactions on Electron Devices, 1983
- Molecular structure, microstructure, macrostructure and properties of silicon nitrideInorganica Chimica Acta, 1976