Possible dislocation multiplication source in (001) semiconductor epitaxy
- 15 October 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (16) , 1637-1639
- https://doi.org/10.1063/1.104072
Abstract
A cross-slip mechanism, based on a commonly observed dislocation configuration and which can produce multiple misfit dislocations in the direction orthogonal to the initial slip direction, is put forth. The mechanism has eight crystallographic variants in (001) epitaxy, and is itself repeatable. The essence of the model is the configuration of the threading dislocation in the epilayer, which bends, avoiding an acute angle between the near-surface screw segment and interfacial segment, resulting in a pinning point in the cross-slip plane which is removed by some distance from the heterointerface.Keywords
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