Stress relief in patterned GaAs grown on mismatched substrates
- 1 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4) , 240-244
- https://doi.org/10.1016/0022-0248(89)90391-6
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Stress variations and relief in patterned GaAs grown on mismatched substratesApplied Physics Letters, 1988
- Stress variations due to microcracks in GaAs grown on SiApplied Physics Letters, 1987
- Biaxially stressed excitons in GaAs/AlGaAs quantum wells grown on Si substratesApplied Physics Letters, 1987
- Photoluminescence and photoluminescence excitation spectra of GaAs grown directly on SiSolid State Communications, 1986
- Semiconductor heterojunction topics: Introduction and overviewSolid-State Electronics, 1986
- Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVDJapanese Journal of Applied Physics, 1984
- Effects of uniaxial stress on the electroreflectance spectrum of Ge and GaAsPhysical Review B, 1977
- Piezo-Electroreflectance in Ge, GaAs, and SiPhysical Review B, 1968