In situ determination of phosphorus composition in GaAs1−xPx grown by gas-source molecular beam epitaxy
- 15 July 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (3) , 292-294
- https://doi.org/10.1063/1.105601
Abstract
We report for the first time an in situ determination of phosphorus compositions in a mixed group‐V compound, such as GaAs1−xPx, grown by gas‐source molecular beam epitaxy. Reflection high‐energy electron diffraction intensity oscillations from As‐limited and (As+P)‐limited growth are observed on a Ga‐rich GaAs surface. The phosphorus composition is therefore deduced from the different growth rates. Viability of this technique is strongly confirmed by the good agreement with the phosphorus compositions determined ex situ by x‐ray rocking curve measurements on GaAs/GaAsP strained‐layer superlattice structures.Keywords
This publication has 11 references indexed in Scilit:
- Composition control of GaAsP grown by molecular beam epitaxyJournal of Crystal Growth, 1991
- Determination of V/III ratios on phosphide surfaces during gas source molecular beam epitaxyApplied Physics Letters, 1991
- Preparation and characterization of high quality inGaAs/GaAs strained multi-quantum wells grown by MBEJournal of Crystal Growth, 1990
- Gas-Source Molecular Beam EpitaxyAnnual Review of Materials Science, 1989
- Gas source molecular beam epitaxy of InP, GaInAs and GaInAsPProgress in Crystal Growth and Characterization, 1986
- Thermodynamic analysis of metalorganic vapor phase epitaxy of III–V alloy semiconductorsJournal of Crystal Growth, 1986
- Vapor-solid distribution relation in MOCVD GaAsxP1−x and InAsxP1−xJournal of Crystal Growth, 1985
- Alloying mechanisms in MOVPE GaAs1-xPxJournal of Crystal Growth, 1983
- Composition effects in the growth of Ga(In)AsyP1-y alloys by MBEJournal of Crystal Growth, 1980
- GaAs, GaP, and GaAs[sub x]P[sub 1−x] Epitaxial Films Grown by Molecular Beam DepositionJournal of Vacuum Science and Technology, 1969