Spatial temperature profiles due to nonuniform self-heating in LDMOS's in thin SOI
- 1 January 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 18 (1) , 13-15
- https://doi.org/10.1109/55.553061
Abstract
Temperature profiles resulting from self-heating in SOI-LDMOS devices with uniformly doped and linearly graded drift regions were measured using a resistance thermometry technique. Two-dimensional electrothermal device simulations were performed and the results agreed with the experiments. Because of the different power dissipation profiles, RESURF devices with a uniformly doped drift region assume a fairly uniform temperature distribution while devices with a linearly graded drift region have a much higher temperature rise near the source than the drain. This local hot spot near the source raises reliability issues in device design.Keywords
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