High voltage LDMOS transistors in sub-micron SOI films

This publication has 6 references indexed in Scilit:

• Comparison of junction-isolated and soi high-voltage devices operating in the source-follower mode
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2005
• Dependence of breakdown voltage on drift length and buried oxide thickness in SOI RESURF LDMOS transistors
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Comparison of self-heating effects in bulk-silicon and SOI high-voltage devices
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Realization of high breakdown voltage (<700 V) in thin SOI devices
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Self-heating effect in lateral DMOS on SOI
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Implemention of linear doping profiles for high voltage thin-film SOI devices
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002