Implemention of linear doping profiles for high voltage thin-film SOI devices
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
In this paper, a novel approach is proposed to obtain a linear doping profile for the implementation of lateral high voltage devices on thin-film Silicon-On-Insulator (SOI). The linear doping profile is obtained by using a lateral variation doping technique. In this technique, a smeared-out dopant distribution is implemented through the use of a sequence of small opening slits in the oxide mask with subsequent impurity implantation and drive-in processes. To understand the effect of the location and size of the oxide slits on the final doping profile, an one-dimensional analytical model is developed. Moreover, a computer program has also been developed to facilitate the slit parameters optimization. Validity of the model and the program has been verified by performing extensive two-dimensional process and device simulations Author(s) Lai, T.M.L. Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Clear Water Bay, Hong Kong Sin, J.K.O. ; Man Wong ; Poon, V.M.C. ; Ko, P.K.Keywords
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