Gain of a heterojunction bipolar phototransistor
- 1 March 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 32 (3) , 622-627
- https://doi.org/10.1109/t-ed.1985.21988
Abstract
Analytical expressions have been derived for the collector current, optical gain, and quantum efficiency for a heterojunction, bi-polar phototransistor (HPT). These expressions can be utilized to optimize the current gain and quantum efficiency for HPT design. The presence of avalanche multiplication in the base-collector junction has been taken into account and shown to be a significant factor in determining the gain of an InGaAs/InP phototransistor. Experimental results of optical gain versus the collector-emitter voltage can only be explained in terms Of avalanche multiplication.Keywords
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