High-reflectivity GeSi/Si asymmetric Bragg reflectorat 0.8 µm
- 17 February 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (4) , 315-316
- https://doi.org/10.1049/el:19940205
Abstract
A high reflectivity GeSi/Si Bragg mirror centred at 800 nm is reported. The increased absorption in the GeSi layers at this wavelength is found to be more than compensated for by the increased refractive index step available. Agreement with simulations is excellent. This mirror can be used to fabricate a high quantum efficiency, high speed resonant cavity photodiode.Keywords
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