Low-voltage high-gain resonant-cavity avalanche photodiode
- 1 April 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 3 (4) , 354-356
- https://doi.org/10.1109/68.82110
Abstract
For p-i-n photodiodes and avalanche photodiodes (APDs) in the low-gain regime, there is a performance tradeoff between the transit-time contribution to the bandwidth and the quantum efficiency. A new photodetector structure is demonstrated that alleviates limitations imposed by this tradeoff. This structure utilizes a thin ( approximately=900 AA) depleted absorbing layer to reduce the transit time and achieve avalanche gain at low bias voltage (V/sub b/ approximately=9 V). The external quantum efficiency has been enhanced ( eta /sub e/>49%) by incorporating the structure into a resonant cavity.<>Keywords
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