InP/InGaAsP/InGaAs avalanche photodiodes with 70 GHz gain-bandwidth product
- 2 November 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (18) , 1454-1456
- https://doi.org/10.1063/1.98655
Abstract
A wide bandwidth (8 GHz) and a high gain-bandwidth product (70 GHz) have been achieved with InP/InGaAsP/InGaAs avalanche photodiodes (APD’s) grown by chemical beam epitaxy. These APD’s also exhibit low dark current (90% at λ=1.3 μm), and high avalanche gain (M0≂40).Keywords
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