Improvement in lasing characteristics of II–VI blue-green lasers using quaternary and ternary alloys to produce pseudomorphic heterostructures
- 2 April 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 138 (1-4) , 686-691
- https://doi.org/10.1016/0022-0248(94)90891-5
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Room temperature continuous operation of blue-green laser diodesElectronics Letters, 1993
- Blue-green injection lasers containing pseudomorphic Zn1−xMgxSySe1−y cladding layers and operating up to 394 KApplied Physics Letters, 1993
- Quantum well GaAs/AlGaAs diode lasers grown in a PLANET OMVPE reactorJournal of Crystal Growth, 1992
- Blue-green laser diodesApplied Physics Letters, 1991
- Injection-stimulated dislocation motion in semiconductorsApplied Physics Letters, 1976
- Nature of optically induced defects in Ga1−xAlxAs–GaAs double-heterojunction laser structuresApplied Physics Letters, 1974