Dual-channel strained-layer in GaAs-GaAs-AlGaAs WDM source with integrated coupler by selective-area MOCVD
- 1 October 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 6 (10) , 1167-1169
- https://doi.org/10.1109/68.329627
Abstract
Selective-area metalorganic chemical vapor deposition is used to fabricate a dual-channel strained-layer InGaAs-GaAs-AlGaAs WDM source with integrated coupler. Threshold currents of 11.5 mA were obtained for 1100 /spl mu/m long uncoated channels operating cw at room temperature. Both channels can be coupled into a single mode fiber without the need for an external coupler.Keywords
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