Surface depletion and inversion in semiconductors with arbitrary dopant profiles
- 15 July 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (2) , 220-223
- https://doi.org/10.1063/1.92101
Abstract
A general analytical description of the depletion-layer problem in nonuniformly doped semiconductors is a valuable tool because it permits analytical manipulation of critical quantities for the purpose of establishing criteria and relating measurable quantities. A formulation is presented here which retains the dopant profile as an arbitrary function and defines integrals over this profile together with functions of the potential that uniquely specify the problem. An example of a such a criterion, which is presented, is the threshold voltage of a metal-oxide semiconductor field-effect transistor with a highly nonuniform substrate dopant profile.Keywords
This publication has 12 references indexed in Scilit:
- MP-B4 exact formulation of MOS C-V profilingIEEE Transactions on Electron Devices, 1979
- Onset of heavy inversion in MOS devices doped nonuniformly near the surfaceIEEE Transactions on Electron Devices, 1977
- Interface states on semiconductor/insulator surfacesC R C Critical Reviews in Solid State Sciences, 1976
- Threshold voltage of nonuniformly doped MOS structuresSolid-State Electronics, 1973
- Si-SiO[sub 2] Fast Interface State MeasurementsJournal of the Electrochemical Society, 1968
- Surface Space-Charge Calculations for SemiconductorsJournal of Applied Physics, 1960
- Space Charge Calculations for SemiconductorsJournal of Applied Physics, 1958
- Physical Theory of Semiconductor SurfacesPhysical Review B, 1955
- Calculation of the Space Charge, Electric Field, and Free Carrier Concentration at the Surface of a SemiconductorJournal of Applied Physics, 1955
- -Type Surface Conductivity on-Type GermaniumPhysical Review B, 1953