Very efficient void formation in ion implanted InSb
- 1 January 1980
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (1) , 40-42
- https://doi.org/10.1063/1.91308
Abstract
Ion implantation in InSb forms a surface layer which looks like a sponge. We show that this structure is related to an elevation of the surface by as much as 2 μm.In this perturbated layer, large voids typically 50 Å in diameter were observed by TEM. We have studied the evolution of this void formation as a function of the mass, the energy, and the dose of ions.Keywords
This publication has 7 references indexed in Scilit:
- Amorphisation and recrystallisation of InSb ion implanted layersPhysica Status Solidi (a), 1978
- Dose rate and orientation dependence of damage induced by Xe and Cd lmplants in InSbRadiation Effects, 1977
- Planar InSb photodiodes fabricated by Be and Mg ion implantationSolid-State Electronics, 1975
- Hall effect and sheet resistivity measurements on ion-bombarded InSbPhysica Status Solidi (a), 1975
- n-p JUNCTION PHOTODETECTORS IN InSb FABRICATED BY PROTON BOMBARDMENTApplied Physics Letters, 1970
- Ion implantation in InAs and InSbRadiation Effects, 1970
- Radiation-Induced Expansion of SemiconductorsPhysical Review B, 1957