Ab initio calculations of H/sup +/ energetics in SiO/sub 2/: Implications for transport
- 1 December 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 46 (6) , 1568-1573
- https://doi.org/10.1109/23.819122
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
- Structure and oxidation kinetics of the Si(100)-interfacePhysical Review B, 1999
- Microscopic mechanisms of radiation-induced proton density decay in SiO/sub 2/ filmsIEEE Transactions on Nuclear Science, 1998
- Diffusion of Atomic Oxygen inPhysical Review Letters, 1998
- First-principles calculations for charged states of hydrogen atoms inPhysical Review B, 1997
- Structure and Hyperfine Parameters ofCenters in-Quartz and in VitreousPhysical Review Letters, 1997
- Generalized Gradient Theory for Silica Phase TransitionsPhysical Review Letters, 1996
- A Quantum Mechanical Investigation of Positively Charged Defects In SiO2 Thin Film DevicesMRS Proceedings, 1996
- Interaction of hydrogen with defects in a-SiO2Journal of Non-Crystalline Solids, 1994
- Iterative minimization techniques forab initiototal-energy calculations: molecular dynamics and conjugate gradientsReviews of Modern Physics, 1992
- Soft self-consistent pseudopotentials in a generalized eigenvalue formalismPhysical Review B, 1990