Nearly isotropic etching of 6H-SiC in NF3 and O2 using a remote plasma
- 12 July 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (2) , 171-173
- https://doi.org/10.1063/1.110389
Abstract
Nearly isotropic etching of the 6H‐SiC carbon face has been achieved in a remote plasma at 330 °C using a mixture of O2 and NF3 in argon. Using evaporated aluminum as a mask, undercutting has been observed to a distance equal to the etch depth. The etch rate is a function of the ratio of O2 to NF3 flow rates and of temperature, peaking strongly to 220 nm/min at 82% oxygen for 330 °C. Smooth surfaces were obtained for gas ratios leading to the maximum etch rate, and also for a NF3‐argon mixture, with significant roughening observed for other O2‐NF3‐argon mixtures. In the absence of a practical wet etch for SiC, this procedure is promising for isotropic etching in SiC device processing.Keywords
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