Absorption spectra of ZnSe-ZnS strained-layer superlattices grown on (001) GaAs by molecular beam epitaxy
- 25 May 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (21) , 2640-2641
- https://doi.org/10.1063/1.106880
Abstract
The absorption spectra of ZnSe-ZnS strained-layer superlattices were measured at temperatures ranging from 16 K to room temperature. Three excitonic absorption peaks corresponding to 1E-1HH, 1E-1LH, and 1E-3HH transitions were observed for the first time.Keywords
This publication has 16 references indexed in Scilit:
- Optical absorption of ZnSe-ZnS strained layer superlatticesApplied Physics Letters, 1991
- Blue-green laser diodesApplied Physics Letters, 1991
- Determination of refractive index and study of absorption in wide gap II–VI semiconductor superlatticesJournal of Crystal Growth, 1991
- Effects of strain on the optical and vibrational properties of ZnSe-ZnSxSe1-x strained-layer superlatticesJournal of Luminescence, 1990
- Effects of strain and temperature on excitonic emissions in ZnSeZnS strained-layer superlattices grown by low-pressure MOCVDJournal of Crystal Growth, 1988
- Growth of ZnSe-ZnS Strained-Layer Superlattices by Metallorganic Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1987
- Misfit strains in semiconductor superlatticesSurface Science, 1986
- Temperature dependence of photoluminescence of ZnS-ZnSe superlatticesJournal of Crystal Growth, 1985
- Wide gap II-VI superlattices of ZnSe-Zn1−xMnxSeApplied Physics Letters, 1985
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974