Optical absorption of ZnSe-ZnS strained layer superlattices
- 21 October 1991
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (17) , 2142-2144
- https://doi.org/10.1063/1.106106
Abstract
A study of the absorption spectra of excitons in ZnSe‐ZnS strained layer superlattices (SLS) with well widths ranging from 0.6 to 7.6 nm is reported. The n=1 heavy hole (hh) and light hole (1h) exciton absorptions are clearly resolved for all samples even near room temperature. A theoretical estimation of the n=1 hh exciton peak energy, which takes account of strain, quantum confinement of free carriers, and exciton binding energy enhancement by reduced dimensionality, is in excellent agreement with the experimental results. The variations in absorption linewidth and energy shift between absorption and emission band peaks, as a function of quantum well width, have also been measured: the experimental results provide evidence that the origin of the so‐called ‘‘Stokes’ shift’’ lies in Anderson localization due to monolayer fluctuations in the well width. The temperature dependence of the exciton peak energy and its linewidth are interpreted in terms of electron‐phonon and exciton‐phonon interactions.Keywords
This publication has 13 references indexed in Scilit:
- MOCVD Layer growth of ZnSe and ZnS / ZnSe multiple layers using nitrogen containing adducts of dimethylzincJournal of Crystal Growth, 1990
- Transmission spectra of substrate-free ZnTe-ZnSe superlatticesApplied Physics Letters, 1990
- Photoluminescence of wide bandgap II–VI superlatticesJournal of Crystal Growth, 1990
- Excitonic Properties of ZnSe-ZnS Strained-Layer Superlattices and A Fibonacci SequenceMRS Proceedings, 1989
- Growth of ZnSe/ZnS strained-layer superlattices on Si substratesJournal of Applied Physics, 1988
- Optical characterization and band offsets in ZnSe- strained-layer superlatticesPhysical Review B, 1988
- Excitonic and edge emissions in MOCVD-grown ZnS films and ZnSe-ZnS superlatticesJournal of Crystal Growth, 1988
- Effects of strain and temperature on excitonic emissions in ZnSeZnS strained-layer superlattices grown by low-pressure MOCVDJournal of Crystal Growth, 1988
- ZnSe-ZnS strained-layer superlattice grown by low pressure metalorganic vapor phase epitaxy using methylalkylsApplied Physics Letters, 1986
- Superlattice band structure in the envelope-function approximationPhysical Review B, 1981