Large-signal microwave characterization of AlGaAs/GaAs HBT's based on a physics-based electrothermal model
- 1 January 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 45 (1) , 58-71
- https://doi.org/10.1109/22.552033
Abstract
A physics-based multicell electrothermal equivalent circuit model is described that is applied to the large-signal microwave characterization of AlGaAs/GaAs HBT's. This highly efficient model, which incorporates a new multifinger electrothermal model, has been used to perform dc, small-signal and load-pull characterization, and investigate parameter-spreads due to fabrication process variations. An enhanced Newton algorithm is presented for solving the nonlinear system of equations for the model and associated circuit simulator, which allows a faster and more robust solution than contemporary quasi-Newton nonlinear schemes. The model has been applied to the characterization of heterojunction bipolar transistor (HBT) microwave power amplifierKeywords
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