Embedded-stripe GaAs-GaAlAs double-heterostructure lasers with polycrystalline GaAsP layers - I: Lasers with cleaved mirrors
- 1 August 1977
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 13 (8) , 623-627
- https://doi.org/10.1109/jqe.1977.1069408
Abstract
We report a new type of embedded stripe laser in which low-order mode CW oscillation is successfully attained at room temperature. In order to achieve lateral current confinement, a high-resistivity polycrystalline GaAsP layer is formed around the mesa stripe by selective vapor-phase growth technology. It turns out that a stable single-mode operation is attained at an injected current up to several times the threshold value.Keywords
This publication has 12 references indexed in Scilit:
- Channeled substrate buried heterostructure GaAs- (GaAl)As injection lasersJournal of Applied Physics, 1976
- Single-transverse-mode injection lasers with embedded stripe layer grown by molecular beam epitaxyApplied Physics Letters, 1976
- Etched buried heterostructure GaAs/GaAlAs injection lasersApplied Physics Letters, 1975
- GaAs–Ga1−xAlxAs buried-heterostructure injection lasersJournal of Applied Physics, 1974
- A GaAs-AlxGa1-xAs Double Heterostructure Planar Stripe LaserJapanese Journal of Applied Physics, 1973
- Vapor Growth of GaAs1-xPxby the Pyrolysis of Ga(CH3)3, AsH3and PH3Japanese Journal of Applied Physics, 1972
- Proton-bombardment formation of stripe-geometry heterostructure lasers for 300 K CW operationProceedings of the IEEE, 1972
- Very-Low-Current Operation of Mesa-Stripe-Geometry Double-Heterostructure Injection LasersApplied Physics Letters, 1972
- Asymptotic Expressions for Eigenfunctions and Eigenvalues of a Dielectric or Optical WaveguideIEEE Transactions on Microwave Theory and Techniques, 1969
- The Use of Metal-Organics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1969