Monitoring the growth of nonuniform gratings written holographically by Gaussian laser beams
- 1 April 1985
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (7) , 2402-2405
- https://doi.org/10.1063/1.334348
Abstract
Interfering Gaussian laser beams are sometimes used to photochemically etch gratings into materials; the gratings which result are nonuniform since the groove depth varies over the grating cross section. The grating growth can be monitored in real time by observing the diffraction of the writing beams into their various orders. In order to relate the maximum groove depth to the observed diffraction efficiency, the grating nonuniformity must be accounted for. We present a short calculation which does this. The results are checked with measurements on actual gratings and good agreement is obtained. The results can help to interpret previously published measurements.This publication has 3 references indexed in Scilit:
- Holographic photoelectrochemical etching of diffraction gratings in n-InP and n-GaInAsP for distributed feedback lasersJournal of Applied Physics, 1985
- Maskless chemical etching of submicrometer gratings in single-crystalline GaAsApplied Physics Letters, 1983
- Localized laser etching of compound semiconductors in aqueous solutionApplied Physics Letters, 1982