Improved stability of a-Si:H fabricated from SiH2Cl2 by ECR hydrogen plasma
- 1 May 1996
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 198-200, 419-422
- https://doi.org/10.1016/0022-3093(95)00708-3
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Stable hydrogenated amorphous silicon films deposited from silane and dichlorosilane by radio frequency plasma chemical vapor depositionApplied Physics Letters, 1995
- Fast growth of hydrogenated amorphous silicon from dichlorosilaneApplied Physics Letters, 1994
- Fabrication of stable hydrogenated amorphous silicon from SiH2Cl2 by ECR-hydrogen-plasmaSolar Energy Materials and Solar Cells, 1994
- Stable a-Si:H fabricated from halogenous silane by ECR hydrogen plasmaJournal of Non-Crystalline Solids, 1993
- Towards high deposition rates of a-Si:H: The limiting factorsJournal of Non-Crystalline Solids, 1993
- Importance of surface processes in defect formation in a-Si:HJournal of Non-Crystalline Solids, 1993
- Limitations on models describing the kinetics of light-induced defect creation in hydrogenated amorphous siliconJournal of Applied Physics, 1992
- Reinterpretation of degradation kinetics of amorphous siliconApplied Physics Letters, 1989