Importance of surface processes in defect formation in a-Si:H
- 1 December 1993
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 164-166, 31-36
- https://doi.org/10.1016/0022-3093(93)90485-g
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- Defect Formation Process during Growth of Hydrogenated Amorphous Silicon at High TemperaturesJapanese Journal of Applied Physics, 1992
- Surface reactions during the a-Si : H growth in the diode and triode glow-discharge reactorsSurface Science, 1991
- In situ characterization of the growing a-Si:H surface by IR spectroscopyJournal of Non-Crystalline Solids, 1991
- Numerical studies of epitaxial kinetics: What can computer simulation tell us about nonequilibrium crystal growth?Journal of Vacuum Science & Technology A, 1990
- Spatial Distribution of SiH3 Radicals in RF Silane PlasmaJapanese Journal of Applied Physics, 1990