Chemical modifications at Teflon interfaces induced by MeV ion beams

Abstract
The effect of MeV ion beams incident on Teflon surfaces was studied by x‐ray photoelectron spectroscopy (XPS). Irradiation with 20‐MeV 35Cl4+ was carried out at doses ranging from 1012 to 1014 ions/cm2. Residual gas analysis was performed during irradiation to identify molecular fragments released from the Teflon surface. XPS spectra were recorded before and after ion irradiation. On some substrates, gold thin films were evaporated before and after ion bombardment, respectively, to detect possible modifications in thin‐film adhesion. Changes in the XPS spectra were interpreted in terms of chemical and structural shifts, and related to the observed adhesion modifications.

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