A magnetic multipole reactor for high-flux reactive-ion etching
- 15 March 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (6) , 1899-1903
- https://doi.org/10.1063/1.339889
Abstract
A 13.56-MHz rf discharge has been combined with two kinds of magnetic field. A multipole field, generated by permanent magnets in the surrounding walls, is used to confine the plasma. Superimposed on this is a variable magnetic field parallel to the substrate surface, which is shown to give a considerable increase in plasma density and reduction of electrode self-bias. Etch rates of SiO2 in a CF4 discharge of 5000 Å/min at mTorr pressures are presented.This publication has 14 references indexed in Scilit:
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