Steady-state rf magnetron discharges
- 15 October 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (8) , 2981-2987
- https://doi.org/10.1063/1.335847
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Ion dynamics of rf plasmas and plasma sheaths: A time-resolved spectroscopic studyJournal of Applied Physics, 1984
- Low-energy high flux reactive ion etching by rf magnetron plasmaApplied Physics Letters, 1984
- Langmuir Probe Measurements on CHF 3 and CF 4 Plasmas: The Role of Ions in the Reactive Sputter Etching of SiO2 and SiJournal of the Electrochemical Society, 1983
- Simulation of plasma-assisted etching processes by ion-beam techniquesJournal of Vacuum Science and Technology, 1982
- Detection of CF2 radicals in a plasma etching reactor by laser-induced fluorescence spectroscopyApplied Physics Letters, 1982
- A kinetic study of the plasma-etching process. II. Probe measurements of electron properties in an rf plasma-etching reactorJournal of Applied Physics, 1982
- A kinetic study of the plasma-etching process. I. A model for the etching of Si and SiO2 in CnFm/H2 and CnFm/O2 plasmasJournal of Applied Physics, 1982
- The effect of added acetylene on the rf discharge chemistry of C2F6. A mechanistic model for fluorocarbon plasmasJournal of Applied Physics, 1980
- Diocotron Instability in Plasmas and Gas DischargesJournal of Applied Physics, 1966
- LOW-FREQUENCY OSCILLATIONS IN COAXIAL CYLINDRICAL DISCHARGE TUBES IN A MAGNETIC FIELD PERPENDICULAR TO AN ELECTRIC FIELDApplied Physics Letters, 1964