Effective mass of conduction electrons in
- 15 February 2002
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 65 (11) , 115202
- https://doi.org/10.1103/physrevb.65.115202
Abstract
Electron cyclotron resonance in 0.064, 0.097, 0.11) has been studied in high magnetic fields up to 150 T at photon energies in the range 44–117 meV. We found that the band-edge effective mass of the conduction electrons increases significantly with the Mn concentration. For comparison with the experimental results, the conduction-band Landau levels were calculated by means of the eight-band Pidgeon-Brown model taking into account the exchange interaction. The increase of the band gap due to the Mn ions alone is not sufficient to explain the observed enhancement of the mass. A possible reason for the mass enhancement is an effect of the hybridization. We also found that the electron mass decreases significantly with decreasing temperature. A large spin splitting of the Landau levels due to the exchange field qualitatively explains the relative temperature dependence of the mass.
Keywords
This publication has 33 references indexed in Scilit:
- Far-infrared studies in quantum Hall system of II–VI semiconductors at high magnetic fieldsPhysica B: Condensed Matter, 2001
- Electric-field control of ferromagnetismNature, 2000
- Making Nonmagnetic Semiconductors FerromagneticScience, 1998
- High mobility 2D electron gas in iodine modulation doped CdTe/CdMgTe heterostructuresJournal of Crystal Growth, 1998
- Transport properties and origin of ferromagnetism in (Ga,Mn)AsPhysical Review B, 1998
- Ferromagnetic Order Induced by Photogenerated Carriers in Magnetic III-V Semiconductor Heterostructures of (In,Mn)As/GaSbPhysical Review Letters, 1997
- (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAsApplied Physics Letters, 1996
- Quantum Hall effect in heterostructuresSolid State Communications, 1995
- Diluted magnetic III–V semiconductor structuresSurface Science, 1992
- Magnetotransport properties ofp-type (In,Mn)As diluted magnetic III-V semiconductorsPhysical Review Letters, 1992