High-quality single-crystal Ge stripes on quartz substrate by rapid-melting-growth

Single-crystal Ge on a transparent insulating substrate is desired to achieve advanced thin-film transistors (TFTs) with high speed operation. We have developed the rapid-melting-growth process of amorphous Ge by using polycrystalline Si islands as the growth seed. High-quality and dominantly (100)-oriented single-crystal Ge stripes with $400\mu \text{m}$ length are demonstrated on quartz substrates. The temperature dependence of the electrical conductivity shows a high hole mobility of $1040{\text{cm}}^2/\text{V}\text{s}$ . This method opens up a possibility of Ge-channel TFT with the high carrier mobility.