Scanning tunneling microscopy and spectroscopy of Si/SiGe(001) superlattices
- 28 December 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (26) , 3166-3168
- https://doi.org/10.1063/1.107947
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Strain relaxation and ordering in SiGe layers grown on (100), (111), and (110) Si surfaces by molecular-beam epitaxyApplied Physics Letters, 1991
- Tunneling microscopy and spectroscopy of molecular beam epitaxy grown GaAs-AlGaAs interfacesApplied Physics Letters, 1990
- Nanometer resolution in luminescence microscopy of III-V heterostructuresApplied Physics Letters, 1990
- Observation of AlGaAs/GaAs multiquantum well structure by scanning tunneling microscopyApplied Physics Letters, 1990
- Observation of multiquantum well structure in air using a scanning tunneling microscopeJournal of Vacuum Science & Technology A, 1990
- Tunnel spectroscopy of the AlGaAs-GaAs heterostructure interfaceApplied Physics Letters, 1989
- Core-level photoemission measurements of valence-band offsets in highly strained heterojunctions: Si-Ge systemPhysical Review B, 1989
- Observation of Ga0.47In0.53As/InP Multiquantum Well Structure in Air by Scanning Tunneling MicroscopeJapanese Journal of Applied Physics, 1988
- New method to study band offsets applied to strainedheterojunction interfacesPhysical Review B, 1987
- Scanning tunneling microscopy and potentiometry on a semiconductor heterojunctionApplied Physics Letters, 1987