Silicon surface cleaning by low dose argon-ion bombardment for low-temperature (750 °C) epitaxial deposition. II. Epitaxial quality
- 15 October 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (8) , 3398-3404
- https://doi.org/10.1063/1.339302
Abstract
Argon‐ion bombardment has been optimized as a method to clean silicon substrates prior to epitaxial deposition at low temperatures (750 °C) and very low pressures (−2 Torr). Structural characterization of subsequently deposited films has been performed to establish the relations between cleaning conditions and film properties. When cleaning conditions are insufficient, a residue of native oxide remains at the interface and disrupts the transfer of crystalline structure from the substrate to the epitaxial layer. When cleaning conditions are excessive, the substrate is damaged and the initial stages of film nucleation and growth are disrupted. Using an elevated substrate temperature of 750 °C, a window in ion energy and dose has been found in which native oxide is removed without net damage being produced in the substrate. Under these conditions, epitaxial films of excellent structural quality may be deposited, as evidence by transmission electron microscopy and defect etching.This publication has 17 references indexed in Scilit:
- Silicon surface cleaning by low dose argon-ion bombardment for low-temperature (750 °C) epitaxial silicon deposition. I. Process considerationsJournal of Applied Physics, 1987
- A review of the present understanding of the role of ion/surface interactions and photo-induced reactions during vapor-phase crystal growthJournal of Crystal Growth, 1986
- Ion-solid interactions during ion beam deposition of 74Ge and 30Si on Si at very low ion energies (0–200 eV range)Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- UV/ozone cleaning of surfacesJournal of Vacuum Science & Technology A, 1985
- Cleaning of Si and GaAs Crystal Surfaces by Ion Bombardment in the 50–1500 eV Range: Influence of Bombarding Energy and Sample Temperature on Damage and IncorporationJournal of the Electrochemical Society, 1984
- Ion–surface interactions during vapor phase crystal growth by sputtering, MBE, and plasma-enhanced CVD: Applications to semiconductorsJournal of Vacuum Science and Technology, 1982
- Residual damage to an atomically cleaned low-temperature-annealed Si(100) surfaceApplied Physics Letters, 1980
- A New Preferential Etch for Defects in Silicon CrystalsJournal of the Electrochemical Society, 1977
- Dependence of residual damage on temperature during Ar+ sputter cleaning of siliconJournal of Applied Physics, 1977
- Sources of oxidation-induced stacking faults in Czochralski silicon wafersApplied Physics Letters, 1976