Diode ideality factor for surface recombination current in AlGaAs/GaAs heterojunction bipolar transistors
- 1 December 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (12) , 2726-2732
- https://doi.org/10.1109/16.168749
Abstract
n-p-n AlGaAs/GaAs heterojunction bipolar transistors of various emitter areas have been fabricated to examine the diode ideality factor for surface recombination. These transistors are fabricated with and without exposed extrinsic base surfaces. Comparison of the measured results indicates that the base surface recombination current increases exponentially with the base-emitter voltage with an ideality factor which is closer to 1 than 2(1<n<1.33). This finding agrees with a published theoretical analysis of base surface recombination in HBTs. This study is compared with other experimental work.Keywords
This publication has 17 references indexed in Scilit:
- Experimental comparison of base recombination currents in abrupt and graded AlGaAs/GaAs heterojunction bipolar transistorsElectronics Letters, 1991
- Theoretical comparison of base bulk recombination current and surface recombination current of a mesa AlGaAs/GaAs heterojunction bipolar transistorSolid-State Electronics, 1991
- Comparison of the effects of surface passivation and base quasi-electric fields on the current gain of AlGaAs/GaAs heterojunction bipolar transistors grown on GaAs and Si substratesApplied Physics Letters, 1991
- Effect of emitter-base spacing on the current gain of AlGaAs/GaAs heterojunction bipolar transistorsIEEE Electron Device Letters, 1989
- The effect of base grading on the gain and high-frequency performance of AlGaAs/GaAs heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1989
- Generation-Recombination Current in the Emitter-Base Junction of AlGaAs/GaAs HBTsJapanese Journal of Applied Physics, 1986
- Surface effect-induced fast Be diffusion in heavily doped GaAs grown by molecular-beam epitaxyJournal of Applied Physics, 1986
- Emitter—Base bandgap grading effects on GaAlAs/GaAs heterojunction bipolar transistor characteristicsIEEE Transactions on Electron Devices, 1985
- Heterostructure bipolar transistors and integrated circuitsProceedings of the IEEE, 1982
- Optical waveguides in GaAs–AlGaAs epitaxial layersJournal of Applied Physics, 1973