The effect of base grading on the gain and high-frequency performance of AlGaAs/GaAs heterojunction bipolar transistors
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (10) , 2173-2182
- https://doi.org/10.1109/16.40897
Abstract
No abstract availableThis publication has 29 references indexed in Scilit:
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