Electron and impurity correlations in doped semiconductors

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Abstract
The recent theory of Ferreira da Silva et al. for the specific heat of doped semiconductors, described by the Hubbard model with a random-transfer integral, has been studied in the presence of a magnetic field and impurity correlations, incorporated through a hard-core pair-correlation function. The low-temperature specific heat and the zero-temperature susceptibility of uncompensated phosphorus-doped silicon have been calculated as a function of the impurity concentration. It is found that both electron and impurity correlations enhance the susceptibility and quench the specific heat. The behavior of the relative change in the specific heat due to the magnetic field agrees qualitatively with the low-temperature experimental results.