Low-distortion GaAs-based field effect transistors with InGaP channel layer for high-voltage operation

This publication has 2 references indexed in Scilit:

• L-band 100-watts push-pull GaAs power FET
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• High-breakdown-voltage Ga/sub 0.51/In/sub 0.49/P channel MESFET's grown by GSMBE
  IEEE Electron Device Letters, 1996