High-breakdown-voltage Ga/sub 0.51/In/sub 0.49/P channel MESFET's grown by GSMBE
- 1 September 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 17 (9) , 452-454
- https://doi.org/10.1109/55.536290
Abstract
The first Ga/sub 0.51/In/sub 0.49/P channel MESFETs grown on a (100) GaAs substrate by GSMBE have been fabricated. A high gate-to-drain breakdown voltage of 42 V with a high maximum current density (320 mA/mm) was achieved. This result demonstrates that high-breakdown voltage could be attained by using Ga/sub 0.51/In/sub 0.49/P as the channel material. We also measured a high-maximum oscillation frequency (f/sub max/) of 30 GHz for a 1.5 /spl mu/m gate-length device. This value is quite high compared with other high-breakdown-voltage GaAs MESFET's or MISFET's with the same gate length.Keywords
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