Characterization of P- and N-Type Impurity Diffusions in GaAs from Doped Silica Films
- 1 February 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (2S)
- https://doi.org/10.1143/jjap.34.1127
Abstract
Characteristics of p- and n-type open-tube diffusion into GaAs using zinc (Zn)- and tin (Sn)-doped spin-on silica films are investigated. This paper first describes the difference of carrier concentration profiles between both types of diffusion, and then interstitial-substitutional diffusion mechanisms are proposed. Next, the surface condition after diffusion is observed by SEM and AFM. In the case of using highly doped films, abundant surface defects are detected. However, the surface condition is greatly improved by using low-doped ones. Also, the two micrographs are in good agreement. Finally, lateral diffusion length and electrical characteristics of diffused layers are discussed. It is concluded that this diffusion method is quite simple and useful for the fabrication of III-V compound semiconductor devices.Keywords
This publication has 13 references indexed in Scilit:
- Modeling of zinc-indiffusion-induced disordering of GaAs/AlAs superlatticesJournal of Applied Physics, 1993
- Rapid thermal diffusion and ohmic contacts using zinc in GaAs and GaAlAsApplied Physics Letters, 1987
- Alloyed ohmic contacts to GaAsJournal of Vacuum Science and Technology, 1981
- High-temperature diffusion of sulphur in GaAsJournal of Physics D: Applied Physics, 1981
- Thermal diffusion of tin in GaAs from a spin-on SnO2/SiO2 sourceApplied Physics Letters, 1980
- Capless anneal of ion-implanted GaAs in controlled arsenic vaporJournal of Applied Physics, 1979
- Planar Diffusion in Gallium Arsenide from Tin‐Doped OxidesJournal of the Electrochemical Society, 1979
- Models for contacts to planar devicesSolid-State Electronics, 1972
- Precipitates Induced in GaAs by the In-Diffusion of ZincJournal of the Electrochemical Society, 1967
- Diffusion with Interstitial-Substitutional Equilibrium. Zinc in GaAsPhysical Review B, 1963