Theoretical study of Raman modes in high-pressure phases of Si, Ge, and Sn
- 1 August 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 48 (6) , 3646-3653
- https://doi.org/10.1103/physrevb.48.3646
Abstract
Results of an ab initio investigation of the pressure dependence of the Raman-active phonon modes in the β-Sn phase of Si, Ge, and Sn and the hexagonal-close-packed phase of Si are presented. The calculations are in very good agreement with experimental measurements. Both measurements and calculations show that the β-Sn-structure LO mode has a different pressure dependence for Ge than for Si. This difference between Si and Ge is discussed, and an explanation in terms of d electrons is given.Keywords
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