Nanofabrication with a Novel EB System with a Large and Stable Beam Current
- 1 December 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (12S)
- https://doi.org/10.1143/jjap.35.6421
Abstract
We describe nanofabrication using a novel electron beam (EB) system that has a large and stable beam current, combined with high resolution resists. This system has a low aberration objective lens and a Zr/O/W cathode that provides a probe current of 1.2 nA. By detecting Si-groove marks, the system achieves high overlay accuracy of within 10 nm ( mean+3σ) over large areas. We have realized resist nanofabrication down to 10 nm with small nano edge roughness. By introducing a hard mask consisting of a thin (25 nm) SiO2 layer, we have also obtained a poly-Si gate structure of 30 nm on a thin (4 nm) gate oxide.Keywords
This publication has 14 references indexed in Scilit:
- Suppression of Acid Diffusion in Chemical Amplification Resists by Molecular Control of Base Matrix PolymersJapanese Journal of Applied Physics, 1995
- Active Vibration Correction in Electron Beam Lithography SystemJapanese Journal of Applied Physics, 1995
- An Electron Beam Nanolithography System and its Application to Si NanofabricationJapanese Journal of Applied Physics, 1995
- Fabrication of sub-10-nm silicon lines with minimum fluctuationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Nanometer-scale imaging characteristics of novolak resin-based chemical amplification negative resist systems and molecular weight distribution effects of the resin matrixJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Correlation of Nano Edge Roughness in Resist Patterns with Base PolymersJapanese Journal of Applied Physics, 1993
- Ten-Nanometer Resolution Nanolithography using Newly Developed 50-kV Electron Beam Direct Writing SystemJapanese Journal of Applied Physics, 1991
- A thermally assisted field emission electron beam exposure systemJournal of Vacuum Science & Technology B, 1988
- Electron optical column for high speed nanometric lithographyMicroelectronic Engineering, 1986
- 8 nm Wide Line Fabrication in PMMA on Si Wafers by Electron Beam ExposureJapanese Journal of Applied Physics, 1985