The formation of the gadolinium-Si(111)7 × 7 interface: Reactivity at room temperature
- 3 October 1989
- journal article
- Published by Elsevier in Surface Science
- Vol. 221 (1-2) , 131-143
- https://doi.org/10.1016/0039-6028(89)90571-2
Abstract
No abstract availableKeywords
This publication has 44 references indexed in Scilit:
- Atomic subshell photoionization cross sections and asymmetry parameters: 1 ⩽ Z ⩽ 103Published by Elsevier ,2004
- A photoemission study of the Si(111)/Gd interface: A comparison with the bulk silicidesJournal of Vacuum Science & Technology B, 1987
- Photoemission spectroscopy ofand its connection with Si-Yb interfacesPhysical Review B, 1986
- Chemical reaction and anion trapping at the Yb/GaAs(110) interfaceJournal of Vacuum Science & Technology A, 1986
- Metal–anion bond strength and room temperature diffusion at metal/GaAs interfaces: Transition versus rare-earth versus Au metal overlayersJournal of Vacuum Science & Technology A, 1986
- Substrate-dependent valency of Yb chemisorbed onto Si(111)7×7, Si(100)2×1, anda-Si surfacesPhysical Review B, 1986
- Rare-earth-metal–semiconductor interfacial reactions: Thermodynamic aspectsPhysical Review B, 1986
- Summary Abstract: The silicon/gadolinium interface at room temperatureJournal of Vacuum Science & Technology A, 1985
- Unit Charge on Supported Gold Clusters in Photoemission Final StatePhysical Review Letters, 1983
- Chemical reaction at the annealed Si/Yb interfaceJournal of Vacuum Science & Technology B, 1983