Lasing characteristics of lasers with a vertical cavity based on In0.2Ga0.8As quantum wells
- 1 October 1999
- journal article
- Published by Pleiades Publishing Ltd in Technical Physics Letters
- Vol. 25 (10) , 775-777
- https://doi.org/10.1134/1.1262631
Abstract
Semiconductor lasers with a vertical cavity with a high external quantum efficiency and high radiation power have been developed and constructed. Powers up to 10 W at T=300 K and 20 W at T=250 K have been obtained for 500 μm aperture lasers operating in the pulsed regime.Keywords
This publication has 7 references indexed in Scilit:
- Efficient bottom-emitting VCSEL arrays for highCW optical output powerElectronics Letters, 1998
- Selective Oxidation of AlGaAs/GaAs Structure and Its Application to Vertical Cavity LasersJapanese Journal of Applied Physics, 1998
- Improved performance of oxide-confined vertical-cavity surface-emitting lasers using a tunnel injection active regionApplied Physics Letters, 1997
- High-speed characteristics of low-optical loss oxide-apertured vertical-cavity lasersIEEE Photonics Technology Letters, 1997
- Sub-40 μA continuous-wave lasing in an oxidized vertical-cavity surface-emitting laser with dielectric mirrorsIEEE Photonics Technology Letters, 1996
- 1 W (pulsed) vertical cavity surface emitting laserElectronics Letters, 1993
- InGaAs vertical-cavity surface-emitting lasersIEEE Journal of Quantum Electronics, 1991