X-Ray Imaging Sensor Using a Polycrystalline Cadmium Telluride-Hydrogenated Amorphous Silicon Heterojunction
- 1 November 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (11A) , L909
- https://doi.org/10.1143/jjap.25.l909
Abstract
Polycrystalline cadmium telluride (pc-CdTe) was prepared by sputtering deposition and was of the zincblende type with a preferential orientation of the (111) planes parallel to the substrate. Its electrical resistivity was 1010 ohm cm and X-ray absorption coefficient was 3×103 cm-1. pc-CdTe formed a good heterojunctin against the hydrogenated amorphous silicon (a-Si:H) prepared by GD-CVD. An X-ray image sensor constructed of the heterojunction showed high sensitivity and high resolution.Keywords
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