Surface band structure of MBE-grown GaAs(001)-2 × 4
- 10 May 1982
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 15 (13) , L431-L435
- https://doi.org/10.1088/0022-3719/15/13/010
Abstract
Angle-resolved photoemission measurements using synchrotron radiation have been performed for the As-stable GaAs(001)-2 × 4 reconstruction, which was grown in situ by molecular beam epitaxy. Measurements made at high symmetry points and along symmetry lines of the surface Brillouin zones show weakly dispersing dangling bond-like surface states in the energy range between -1.6 eV and the top of the valence band and a nearly dispersionless state near -3 eV.Keywords
This publication has 9 references indexed in Scilit:
- Photoemission from valence bands of GaAs(001) grown by molecular beam epitaxySolid State Communications, 1981
- Reconstructions of GaAs and AlAs surfaces as a function of metal to As ratioJournal of Vacuum Science and Technology, 1981
- Angle-resolved photoemission from As-stable GaAs (001) surfaces prepared by MBEJournal of Physics C: Solid State Physics, 1981
- Surface Core-Level Binding-Energy Shifts for GaAs(110) and GaSb(110)Physical Review Letters, 1980
- Angle-resolved photoemission, valence-band dispersions, and electron and hole lifetimes for GaAsPhysical Review B, 1980
- Angular resolved photoemission from surface states on reconstructed (100) GaAs surfacesJournal of Physics C: Solid State Physics, 1979
- Atomic and Electronic Structures of Reconstructed Si(100) SurfacesPhysical Review Letters, 1979
- Scattering-theoretic approach to the electronic structure of semiconductor surfaces: The (100) surface of tetrahedral semiconductors and SiPhysical Review B, 1978
- GaAs(100): Its spectrum, effective charge, and reconstruction patternsPhysical Review B, 1976