Angular resolved photoemission from surface states on reconstructed (100) GaAs surfaces
- 28 November 1979
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 12 (22) , L869-L874
- https://doi.org/10.1088/0022-3719/12/22/009
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Angular resolved ups of surface states on GaAs(111) prepared by molecular beam epitaxySurface Science, 1979
- Structure and stoichiometry of {100} GaAs surfaces during molecular beam epitaxyJournal of Crystal Growth, 1978
- Composition and structure of differently prepared GaAs(100) surfaces studied by LEED and AESSurface Science, 1978
- (110) surface states of GaAs: Sensitivity of electronic structure to surface structurePhysical Review B, 1978
- GaAs(100): Its spectrum, effective charge, and reconstruction patternsPhysical Review B, 1976
- Surface reconstruction on semiconductorsSurface Science, 1976
- Electronic surface states on clean and oxygen‐exposed GaAs surfacesJournal of Vacuum Science and Technology, 1976
- Molecular beam epitaxyProgress in Solid State Chemistry, 1975
- Nonlocal pseudopotentials for Ge and GaAsPhysical Review B, 1974
- Influence of volume dope on Fermi level position at gallium arsenide surfacesSurface Science, 1967