CO2 laser annealing characteristics of high-dose boron- and arsenic-implanted silicon
- 1 January 1982
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (1) , 663-668
- https://doi.org/10.1063/1.329974
Abstract
The CO2 laser annealing characteristics of high‐dose boron‐ and arsenic‐implanted silicon were studied by isothermal annealing experiments. A different annealing behavior at different annealing temperatures was found. At high annealing temperatures, a complete electrical activation was achieved, but after a prolonged annealing time, a relaxation of metastable concentrations takes place. At low doses, this phenomenon does not occur. The electrical activation energy is 5.8 eV for boron‐implanted silicon (1.3×1016 cm−2, 120 keV), for annealing temperatures between 1045 and 1140 ° C.This publication has 14 references indexed in Scilit:
- Annealing of boron-implanted silicon using a CW CO2 LaserPhysica Status Solidi (a), 1981
- Front and back surface cw CO2-laser annealing of arsenic ion-implanted siliconApplied Physics A, 1980
- CW CO2-laser annealing of arsenic implanted siliconApplied Physics A, 1980
- High concentration effects of ion implanted boron in siliconApplied Physics A, 1980
- The solid solubility and thermal behavior of metastable concentrations of As in SiApplied Physics Letters, 1980
- Stability study of laser irradiation of silicon diffused with arsenicApplied Physics Letters, 1980
- Solid solubility of As in Si as determined by ion implantation and cw laser annealingApplied Physics Letters, 1979
- Reordering of amorphous layers of Si implanted with 31P, 75As, and 11B ionsJournal of Applied Physics, 1977
- Diffusion of Boron from Shallow Ion Implants in SiliconJournal of the Electrochemical Society, 1972
- Carrier mobilities in silicon empirically related to doping and fieldProceedings of the IEEE, 1967