(InAs)1/(GaAs)4 superlattices quantum-well laser
- 24 February 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (8) , 924-925
- https://doi.org/10.1063/1.106462
Abstract
We report the fabrication and performance characteristics of (InAs1)/(GaAs)4 short‐period superlattice (SPS) strained quantum‐well lasers emitting near 1 μm. The SPS consists of 6 periods of 1 and 4 ML of InAs and GaAs, respectively. The 250‐μm‐long ridge waveguide lasers have a threshold current of 10 mA, an external differential quantum efficiency of 0.35 mW/mA facet, and have operated to a temperature of 200 °C.Keywords
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