Enhanced phosphorus diffusion during the glow discharge deposition of n-type amorphous silicon hydrogen alloy
- 29 November 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (22) , 3060-3062
- https://doi.org/10.1063/1.110258
Abstract
Phosphorus outdiffusion during glow discharge deposition of amorphous silicon hydrogen alloy (a‐Si:H) is investigated. From the measurement of phosphorus profile using secondary ion mass spectroscopy on a double layer structure (n+/i/quartz and i/n+/quartz), it is found that the thermally assisted phosphorus diffusion is negligibly small at 300 °C. However, the phosphorus diffusion is enhanced significantly after passivation with hydrogen plasma at the same temperature. It is proposed that the release of phosphorus by atomic hydrogen to form PHx radicals is the rate limiting step for enhanced diffusion.Keywords
This publication has 7 references indexed in Scilit:
- A novel depletion-gate amorphous silicon thin-film transistorIEEE Electron Device Letters, 1992
- High-performance a-Si:H thin-film transistor using lightly doped channelIEEE Transactions on Electron Devices, 1991
- Amorphous-silicon thin-film transistors with very high field-effect mobilityIEEE Electron Device Letters, 1991
- Amorphous SiC/Si three-color detectorApplied Physics Letters, 1988
- Phosphorus diffusion effect on off-current of a-Si thin film transistorsJournal of Non-Crystalline Solids, 1987
- Resolution of amorphous silicon thin-film transistor instability mechanisms using ambipolar transistorsApplied Physics Letters, 1987
- Amorphous silicon solar cellApplied Physics Letters, 1976