Technology assessment for the implementation of magnetoresistive elements with semiconductor components in magnetic random access memory (MRAM) architectures
- 1 January 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 35 (5) , 2820-2825
- https://doi.org/10.1109/20.800992
Abstract
No abstract availableKeywords
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