High density nonvolatile magnetoresistive RAM
- 24 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 193-196
- https://doi.org/10.1109/iedm.1996.553152
Abstract
Non-volatile memory cells based on ferromagnetically coupled giant magneto-resistive (GMR) material were patterned into submicron feature sizes. Switching characteristics of such cells allow for bipolar signal reading which is twice the intrinsic magnetoresistance change of the material. Excellent thermal stability is reported for deep submicron memory cells.Keywords
This publication has 5 references indexed in Scilit:
- An IC process compatible nonvolatile magnetic RAMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Design, simulation, and realization of solid state memory element using the weakly coupled GMR effectIEEE Transactions on Magnetics, 1996
- Experimental and analytical properties of 0.2 micron wide, multi-layer, GMR, memory elementsIEEE Transactions on Magnetics, 1996
- Spin-Valve Memory Elements Using [{Co-Pt/Cu/Ni-Fe-Co}/Cu] MultilayersJapanese Journal of Applied Physics, 1995
- Magnetoresistive memory technologyThin Solid Films, 1992